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PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features Excellent thermal stability Common source configuration POUT = 35W with 16.9dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55035 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55035 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55035's superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-10RF (straight lead) Pin connection Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Gate Drain Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes Part number PD55035-E PD55035S-E PD55035TR-E PD55035STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Packing Tube Tube Tape and reel Tape and reel May 2006 Rev 1 1/22 www.st.com 22 Contents PD55035-E, PD55035S-E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 5 6 7 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Typical performance 175MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7.1 7.2 7.3 7.4 PD55035S (VDS = 12.5V IDS = 500mA) . . . . . . . . . . . . . . . . . . . . . . . . . 12 PD55035S (VDS = 12.5V IDS = 1A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 PD55035S (VDS = 12.5V IDS = 2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PD55035S (VDS = 13.8V IDS = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 PD55035-E, PD55035S-E Electrical data 1 1.1 Electrical data Maximum ratings Table 1. Symbol V(BR)DSS VGS ID PDISS TJ TSTG Absolute maximum ratings (TCASE = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70C) Max. operating junction temperature Storage temperature Value 40 20 7 95 165 -65 to +150 Unit V V A W C C 1.2 Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Value 1.0 Unit C/W 3/22 Electrical Characteristics PD55035-E, PD55035S-E 2 Electrical Characteristics TCASE = +25 oC 2.1 Static Table 3. Symbol IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0V VGS = 20V VDS = 28V VGS = 10V VDS = 10V VGS = 0V VGS = 0V VGS = 0V Static Test conditions VDS = 28V VDS = 0V ID = 100mA ID = 3A ID = 3A VDS = 12.5V VDS = 12.5V VDS = 12.5V f = 1MHz f = 1MHz f = 1MHz 2.5 92 73 6.1 2.0 0.8 Min. Typ. Max. 1 1 5.0 0.95 Unit A A V V mho pF pF pF 2.2 Dynamic Table 4. Symbol POUT GP nD Dynamic Test conditions VDD = 12.5V, IDQ = 200mA f = 500MHz Min. 35 13 16.9 62 20:1 Typ. Max. Unit W dB % VSWR VDD = 12.5V, IDQ = 200mA, POUT = 35W, f = 500MHz VDD = 12.5V, IDQ = 200mA, POUT = 35W, f = 500MHz Load VDD = 15.5V, IDQ = 200mA, POUT = 35W, f = 500MHz mismatch All phase angles 4/22 PD55035-E, PD55035S-E Impedance 3 Impedance Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) 175 480 500 520 ZIN () 3.34 - j 5.84 0.53 - j 1.08 0.45 - j 1.21 0.42 - j 1.20 ZDL() 1.67 + j 1.45 0.86 + j 0.25 1.05 + j 0.03 1.04 + j 0.15 5/22 Typical performance PD55035-E, PD55035S-E 4 Figure 2. Typical performance Capacitance vs supply voltage Figure 3. Drain current vs gate source voltage 1000 8 7 6 5 Vds = 10 V Ciss 100 Coss C (pF) Id (A) 4 3 10 2 Crss f = 1 MHz 1 0 1 0 4 8 12 16 20 24 28 Vdd (V) 1 2 3 Vgs (V) 4 5 6 Figure 4. Gate-source voltage vs case temperature Figure 5. Output power vs input power 1.02 ID = 6 A 45 40 1.01 ID = 5 A Vgs (normalized) 1 Pout (W) 35 30 25 20 15 10 5 Vdd =1 2.5 V Idq = 20 0 mA ID = 4 A 52 0 MHz 4 80 , 5 00 MHz 0.99 ID = 3 A 0.98 ID = 2 A 0.97 -25 0 25 Tc (C ) 50 75 100 0 0 0.25 0 .5 0 .7 5 Pin (W ) 1 1 .25 1.5 6/22 PD55035-E, PD55035S-E Typical performance Figure 6. 24 Power gain vs output power Figure 7. Efficiency vs output power 70 480 MHz 520 MHz 500 MHz 22 60 20 520 MHz 18 480, 500 MHz 50 Nd (%) Vdd = 12.5 V Idq = 200 m A Gp (dB) 40 16 14 30 12 20 Vdd = 12.5 V Idq = 200 m A 50 10 0 10 20 Pout (W ) 30 40 10 0 10 20 Pout (W ) 30 40 50 Figure 8. 0 Input return loss vs output power Figure 9. 38 Output power vs bias current Vdd =12.5 V Idq = 200 m A -5 500 MHz 37 520 MHz -10 480 MHz 36 Pout (W) 520 MHz 500 MHz RL (dB) -15 35 -20 -25 480 MHz 34 Vdd = 12.5 V Pin = 0.72 W -30 0 10 20 Pout (W ) 30 40 50 33 0 200 400 Idq (m A) 600 800 1000 7/22 Typical performance Figure 10. Efficiency vs bias current 80 PD55035-E, PD55035S-E Figure 11. Output power vs supply voltage 60 70 500 MHz 50 520 MHz 60 480, 520 MHz 40 500 MHz Pout (W) 480 MHz Nd (%) 50 30 40 20 30 Vdd = 12.5 V Pin = 0.72 W 20 10 Idq = 200 m A Pin = 0.72 W 10 0 200 400 Idq (m A) 600 800 1000 0 6 8 10 12 Vdd (V) 14 16 18 Figure 12. Efficiency vs supply voltage 80 520 MHz 70 60 50 40 30 480 MHz 500 MHz Figure 13. Output power vs gate voltage 45 40 35 30 25 20 15 520 500 480 MHz 20 10 0 6 8 10 12 Vdd (V) 14 16 18 Idq = 200 m A Pin = 0.72 W Pout (W) Nd (%) 10 5 0 0 0.5 1 1.5 2 Vgs (V) 2.5 3 3.5 4 Vdd = 12.5 V Pin = 0.72 W 8/22 PD55035-E, PD55035S-E Test circuit 5 Test circuit Figure 14. 500MHz test circuit schematic (engineering) VGG + B1 B2 VDD + C10 C9 C8 R3 R2 C19 L1 C18 C17 C16 R1 C7 Z4 DUT Z5 Z6 Z7 Z8 Z9 C15 RF INPUT Z1 C1 C2 Z2 N2 Z3 RF OUTPUT C3 C4 C5 C6 C13 C12 C11 C14 Table 6. Test circuit component part list Component B1,B2 C1,C13 FERRITE BEAD 300 pF, 100 mil CHIP CAPACITOR 1 to 20 pF TRIMMER CAPACITOR 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 pF 100 mil CHIP CAPACITOR 10 F, 50 V ELECTROLYTIC CAPACITOR 0.1 mF, 100 mil CHIP CAP 1.000 pF 100 mil CHIP CAP 33 pF, 100 mil CHIP CAP 56 nH, 7 TURN, COILCRAFT TYPE N FLANGE MOUNT 15 1 W CHIP RESISTOR , 1 K 1 W CHIP RESISTOR , 33 K 1 W CHIP RESISTOR , 0.471" X 0.080" MICROSTRIP 1.082" X 0.080" MICROSTRIP 0.372" X 0.080" MICROSTRIP 0.260" X 0.223" MICROSTRIP 0.050" X 0.080" MICROSTRIP 0.551" X 0.080" MICROSTRIP 0.825" X 0.080" MICROSTRIP 0.489" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000 THK 0.030", r = 2.55 2oz. ED cu 2 SIDES. Description C2,C3,C4,C12,C13,C14 C6 C7, C19 C10, C16 C9, C17 C8, C18 C5, C11 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4,Z5 Z6 Z7 Z8 Z9 BOARD 9/22 Typical performance 175MHz PD55035-E, PD55035S-E 6 Typical performance 175MHz Figure 16. Power gain vs output power 25 Figure 15. Output power vs input power 45 40 35 30 20 15 Pout (W) Gp (dB) 10 15 10 5 0 0 0.2 0.4 0.6 Pin (W ) 0.8 1 1.2 Vdd = 12.5 V Idq = 200 m A f = 175 MHz 5 Vdd = 12.5 V Idq = 200 m A f = 175 MHz 0 0 10 20 Pout (W ) 30 40 50 25 20 Figure 17. Efficiency vs output power 80 70 Figure 18. Input return loss vs output power 0 Vdd = 12.5 V Idq = 200 m A f = 175 MHz -5 60 50 40 30 20 10 0 0 10 20 Pout (W ) 30 40 50 Vdd = 12.5 V Idq = 200 m A f = 175 MHz -10 RL (dB) -15 -20 -25 0 10 20 Pout (W ) 30 40 50 10/22 Nd (%) PD55035-E, PD55035S-E Figure 19. 175MHz test circuit schematic (engineering) +VGG Typical performance 175MHz +VDD RF Input RF Output Table 7. 175MHz test circuit component part list Description 10 F ELECTROLYTIC CAPACITOR 0.1 F CHIP CAPACITOR 0.01 F CHIP CAPACITOR 1200 pF CHIP CAPACITOR 1000 pF CHIP CAPACITOR ARCO 406 TRIMMER CAPACITOR 62 pF CHIP CAPACITOR 15 pF CHIP CAPACITOR 20 pF CHIP CAPACITOR 75 pF CHIP CAPACITOR JOHANSON 1-20 pF TRIMMER CAPACITOR 33 k CHIP RESISTOR 18 CHIP RESISTOR 27 CHIP RESISTOR 47 CHIP RESISTOR 5 TURN, 16 AWG MAGNETWIRE, ID = 0.25", INDUCTOR FERRITE BEAD ROGER, ULTRA LAM 2000 THK 0.030", r = 2.55 2oz. ED Cu 2 SIDES. Component C1,C6 C2,C5 C3, C4 C7, C8 C9, C16 C10 C11 C12 C13 C14 C15 R1 R2 R3 R4 L1 FB1, FB2 BOARD 11/22 Common source s-parameter PD55035-E, PD55035S-E 7 7.1 Common source s-parameter PD55035S (VDS = 12.5V IDS = 500mA) Table 8. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S-parameter IS 11I 0.823 0.855 0.875 0.891 0.902 0.918 0.924 0.934 0.940 0.949 0.956 0.958 0.963 0.968 0.971 0.970 0.973 0.975 0.974 0.976 0.977 0.976 0.978 0.979 0.980 0.979 0.977 0.975 0.974 0.972 S 11 -162 -169 -172 -173 -174 -175 -176 -176 -177 -177 -178 -179 -180 180 179 179 178 178 177 177 176 176 176 175 175 174 174 174 173 173 IS 21I 14.28 6.87 4.50 3.18 2.42 1.90 1.52 1.25 1.03 0.87 0.74 0.65 0.56 0.49 0.44 0.39 0.35 0.32 0.29 0.26 0.24 0.22 0.20 0.19 0.18 0.16 0.15 0.14 0.13 0.12 S 21 86 75 68 60 53 47 42 37 33 29 26 23 20 18 15 13 12 10 8 7 5 4 2 1 -1 -2 -3 -3 -3 -4 IS 12I 0.015 0.015 0.014 0.013 0.012 0.011 0.010 0.008 0.007 0.007 0.005 0.004 0.004 0.003 0.003 0.002 0.002 0.002 0.002 0.003 0.002 0.003 0.003 0.004 0.004 0.005 0.006 0.006 0.006 0.007 S 12 -3 -11 -17 -24 -29 -32 -36 -37 -38 -40 -40 -36 -36 -27 -21 -5 11 24 27 47 61 69 72 78 87 86 88 91 97 117 IS 22I 0.782 0.798 0.813 0.835 0.856 0.876 0.890 0.903 0.918 0.928 0.935 0.946 0.952 0.955 0.959 0.962 0.967 0.967 0.971 0.972 0.976 0.976 0.974 0.975 0.977 0.976 0.975 0.977 0.975 0.969 S 22 -168 -171 -172 -172 -172 -173 -173 -174 -175 -175 -176 -177 -178 -178 -179 -179 -180 179 179 178 178 177 177 176 176 176 175 174 174 174 12/22 PD55035-E, PD55035S-E Common source s-parameter 7.2 PD55035S (VDS = 12.5V IDS = 1A) Table 9. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S-parameter IS11I 0.845 0.877 0.894 0.905 0.909 0.920 0.924 0.933 0.937 0.946 0.951 0.953 0.959 0.963 0.965 0.964 0.967 0.970 0.971 0.972 0.972 0.973 0.975 0.976 0.975 0.975 0.974 0.973 0.972 0.970 S11 -165 -171 -174 -175 -176 -176 -177 -177 -178 -178 -179 -180 180 179 179 178 178 177 177 176 176 176 175 175 174 174 174 174 173 173 IS21I 14.89 7.23 4.81 3.46 2.69 2.15 1.75 1.46 1.22 1.05 0.90 0.79 0.69 0.61 0.55 0.49 0.44 0.40 0.37 0.34 0.31 0.29 0.26 0.25 0.22 0.21 0.19 0.18 0.17 0.16 S21 87 78 72 65 59 54 48 44 39 36 32 29 26 24 21 19 17 15 13 11 9 8 6 4 3 2 1 0 -1 -1 IS12I 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.005 0.005 0.005 0.006 0.006 0.008 S12 0 -8 -12 -17 -20 -23 -27 -28 -28 -28 -26 -23 -19 -13 -4 6 14 31 39 55 53 64 70 75 85 81 85 89 95 110 IS22I 0.818 0.829 0.836 0.849 0.863 0.877 0.887 0.898 0.910 0.919 0.925 0.936 0.942 0.946 0.951 0.954 0.960 0.960 0.965 0.964 0.970 0.969 0.966 0.971 0.972 0.970 0.970 0.971 0.971 0.965 S22 -171 -174 -175 -175 -175 -175 -175 -176 -176 -177 -177 -178 -178 -179 -179 -180 180 179 179 178 178 177 179 176 176 175 175 174 174 174 13/22 Common source s-parameter PD55035-E, PD55035S-E 7.3 PD55035S (VDS = 12.5V IDS = 2A) Table 10. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S-parameter IS11I 0.863 0.892 0.909 0.916 0.920 0.927 0.929 0.935 0.938 0.944 0.950 0.952 0.956 0.960 0.964 0.964 0.965 0.968 0.969 0.971 0.971 0.970 0.973 0.975 0.973 0.971 0.973 0.971 0.969 0.968 S11 -165 -171 -174 -176 -177 -177 -178 -178 -179 -179 -180 180 179 179 179 178 177 177 177 176 176 176 175 175 174 174 174 173 173 173 IS21I 15.03 7.33 4.91 3.56 2.81 2.26 1.86 1.57 1.33 1.14 0.99 0.87 0.77 0.69 0.61 0.55 0.50 0.46 0.42 0.39 0.36 0.33 0.30 0.28 0.26 0.24 0.23 0.21 0.20 0.18 S21 88 80 74 68 63 58 52 48 44 40 37 33 30 28 25 23 21 18 17 14 12 11 9 7 5 4 3 2 1 1 IS12I 0.010 0.009 0.009 0.009 0.008 0.008 0.007 0.006 0.006 0.005 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.006 0.006 0.008 S12 0 -5 -9 -11 -12 -15 -18 -20 -20 -16 -15 -14 -9 4 11 20 32 38 46 47 57 60 69 72 78 80 83 83 91 112 IS22I 0.841 0.848 0.853 0.860 0.872 0.880 0.889 0.896 0.906 0.914 0.918 0.929 0.935 0.940 0.946 0.949 0.955 0.954 0.959 0.959 0.967 0.964 0.964 0.966 0.971 0.968 0.970 0.971 0.970 0.969 S22 -173 -176 -176 -176 -177 -177 -177 -177 -178 -177 -178 -179 -179 -179 180 180 179 179 178 177 177 177 176 176 175 175 174 174 174 173 14/22 PD55035-E, PD55035S-E Common source s-parameter 7.4 PD55035S (VDS = 13.8V IDS = 3A) Table 11. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S-parameter IS11I 0.867 0.896 0.913 0.921 0.921 0.929 0.930 0.936 0.938 0.947 0.950 0.951 0.956 0.960 0.963 0.962 0.964 0.967 0.969 0.969 0.969 0.969 0.971 0.973 0.971 0.971 0.973 0.970 0.968 0.968 S11 -165 -171 -175 -176 -177 -178 -178 -178 -179 -179 180 180 179 179 178 178 177 177 177 176 176 175 175 175 174 174 174 173 173 173 IS21I 14.95 7.31 4.92 3.57 2.82 2.28 1.90 1.59 1.36 1.17 1.02 0.90 0.79 0.71 0.64 0.58 0.52 0.48 0.44 0.40 0.37 0.34 0.32 0.30 0.27 0.26 0.24 0.22 0.21 0.19 S21 88 80 75 69 64 59 54 50 45 42 38 35 32 29 26 24 22 20 18 15 14 12 10 8 6 5 4 2 3 1 IS12I 0.009 0.009 0.008 0.008 0.008 0.007 0.007 0.006 0.005 0.005 0.004 0.004 0.004 0.003 0.003 0.003 0.004 0.003 0.003 0.004 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.007 0.006 0.008 S12 2 -4 -7 -9 -13 -12 -14 -16 -14 -11 -10 -6 -3 4 17 21 32 41 36 53 58 64 69 71 77 78 80 87 91 111 IS22I 0.848 0.856 0.861 0.866 0.874 0.882 0.888 0.896 0.904 0.915 0.917 0.927 0.934 0.935 0.943 0.948 0.951 0.949 0.958 0.956 0.963 0.963 0.961 0.965 0.967 0.970 0.965 0.973 0.967 0.965 S22 -174 -177 -177 -177 -177 -177 -178 -177 -178 -178 -178 -179 -179 -179 180 179 179 178 178 178 177 177 176 176 175 174 175 174 174 173 15/22 Package mechanical data PD55035-E, PD55035S-E 8 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 16/22 PD55035-E, PD55035S-E Table 12. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G L R1 R2 T T1 T2 2 deg 0.8 5 deg 6 deg 10 deg 8 deg 2 deg 0.8 5.4 0.23 9.4 7.4 13.85 9.3 7.3 5.9 0 3.4 1.2 0.15 Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data mm. Typ. 0.05 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 14.1 9.4 7.4 6.1 0.5 1.2 1 1.1 0.25 0.031 5 deg 6 deg 10 deg 8 deg 0.030 5.65 0.32 9.6 7.6 14.35 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.544 0.365 0.286 0.231 Max. 0.1 3.6 1.4 0.25 Min. 0. 0.134 0.046 0.005 Inch Typ. 0.0019 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.555 0.37 0.292 0.24 0.019 0.047 0.039 0.042 0.01 0.221 0.012 0.377 0.298 0.565 0.375 0.294 0.247 Max. 0.0038 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 20. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 17/22 Package mechanical data Table 13. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 0.8 6 deg 10 deg 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 1.62 3.4 1.2 0.15 PD55035-E, PD55035S-E PowerSO-10RF Straight Lead Mechanical data mm. Typ. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 Max. 1.72 3.6 1.4 0.25 Min. 0.064 0.134 0.046 0.005 Inch Typ. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 Max. 0.068 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 21. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 18/22 PD55035-E, PD55035S-E Figure 22. Tube information Package mechanical data 19/22 Package mechanical data Figure 23. Reel information PD55035-E, PD55035S-E 20/22 PD55035-E, PD55035S-E Revision history 9 Revision history Table 14. Date 11-May-2006 Revision history Revision 1 Initial release. Changes 21/22 PD55035-E, PD55035S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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